Auctions with Anticipated Regret

This paper demonstrates theoretically and experimentally that in first price auctions, overbidding with respect to risk neutral Nash equilibrium might be driven from anticipated loser regret (felt when bidders lose at an affordable price). Different information structures are created to elicit regret: bidders know they will learn the winning bid if they lose (loser regret condition); or the second highest bid if they win (winner regret condition); or no information regarding the other bids. Bidders only in loser regret condition anticipated regret and significantly overbid; in the other conditions bidders did not anticipate regret and hence did not overbid.overbidding, first price auction, anticipated regret

Sensitivity reduction by stable controllers for MIMO infinite dimensional systems via the tangential nevanlinna-pick interpolation

Cataloged from PDF version of article.We study the problem of finding a stable stabilizing controller that satisfies a desired sensitivity level for an MIMO infinite dimensional system. The systems we consider have finitely many simple transmission zeros in (C) over bar (+), but they are allowed to possess infinitely many poles in C+. We compute both upper and lower bounds of the minimum sensitivity achievable by a stable controller via the tangential Nevanlinna-Pick interpolation. We also obtain stable controllers attaining such an upper bound. To illustrate the results, we discuss a repetitive control system as an application of the proposed method

A variable structure control approach to active queue management for TCP with ECN

Cataloged from PDF version of article.It has been shown that the transmission control protocol (TCP) connections through the congested routers can be modeled as a feedback dynamic system. In this paper, we design a variable structure (VS) based control scheme in active queue management (AQM) supporting explicit congestion notification (ECN). By analyzing the robustness and performance of the control scheme for the nonlinear TCP/AQM model, we show that the proposed design has good performance and robustness with respect to the uncertainties of the round-trip time (RTT) and the number of active TCP sessions, which are central to the notion of AQM. Implementation issues are discussed and ns simulations are provided to validate the design and compare its performance to other peer schemes’ in different scenarios. The results show that the proposed design significantly outperforms the peer AQM schemes in terms of packet loss ratio, throughput and buffer fluctuation

Toward photonic crystal based spatial filters with wide angle ranges of total transmission

Cataloged from PDF version of article.Spatial filters with steep switching between wide ranges of total transmission and total reflection can be obtained by using two-dimensional dielectric photonic crystals, which are a few wavelengths thick. The guidelines for engineering bandpass and bandstop filters are given. The flatness of isofrequency contours that are localized around a periphery point of the first Brillouin zone is a necessary but insufficient condition for the existence of wide angle ranges of total transmission at intermediate and large angles of incidence. Such ranges that are wider than 20 degrees are demonstrated

Dwell-time computation for stability of switched systems with time delays

Cataloged from PDF version of article.The aim of this study is to find an improved dwell time that guarantees the stability of switched systems with heterogeneous constant time-delays. Piecewise Lyapunov-Krasovkii functionals are used for each candidate system to investigate the stability of the switched time-delayed system. Under the assumption that each candidate system is stable for small delay values, a sufficient condition for dwell-time that guarantees the asymptotic stability is derived. Numerical examples are given to compare the results with the previously obtained dwell-time bounds. © The Institution of Engineering and Technology 2013

Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AIN/GaN heterostructures

Cataloged from PDF version of article.The dielectric properties and AC electrical conductivity (sigma(ac))of the (Ni/Au)/Al(0.22)Ga(0.78)N/AlN/GaN heterostructures, with and without the SiN(x) passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), sigma(ac) and the real and imaginary part of the electric modulus (M' and M '') were found to be a strong function of frequency and temperature. A decrease in the values of epsilon' and epsilon '' was observed, in which they both showed an increase in frequency and temperature. The values of M' and M '' increase with increasing frequency and temperature. The sigma(ac) increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the epsilon' and sigma(ac). (C) 2009 Elsevier B.V. All rights reserved

Wide-angle reflection-mode spatial filtering and splitting with photonic crystal gratings and single-layer rod gratings

Cataloged from PDF version of article.New diffractive optical elements offering a frequency tolerant, very efficient, high-pass and bandpass spatial filtering over a broad range of incidence angles are demonstrated by numerical simulations. The device operates in reflection mode owing to the (nearly) perfect blazing. It relies on two-dimensional square-lattice photonic crystals composed of dielectric rods with simple corrugations at the interface. Similar performance can be obtained with gratings composed of a single rod layer placed in the near field of a metal mirror, indicating a route to geometries that can be easily fabricated with modern nanotechnologies. Also equal splitting between zero and first negative orders can be obtained for incidence-angle variations that are wider than 60 degrees. (C) 2014 Optical Society of Americ

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AIN/GaN heterostructures

Cataloged from PDF version of article.The temperature dependent capacitance voltage (C-V) and conductance voltage (G/omega-V) characteristics of (Ni/Au)/Al(0.22)Ga(0.78)N/AlN/GaN heterostructures were investigated by considering the series resistance (R(s)) effect in the temperature range of 80-390 K. The experimental results show that the values of C and G/omega are strongly functioning of temperature and bias voltage. The values of C cross at a certain forward bias voltage point (similar to 2.8 V) and then change to negative values for each temperature, which is known as negative capacitance (NC) behavior. In order to explain the NC behavior, we drawn the C vs I and G/omega vs I plots for various temperatures at the same bias voltage. The negativity of the C decreases with increasing temperature at the forward bias voltage, and this decrement in the NC corresponds to the increment of the conductance. When the temperature was increased, the value of C decreased and the intersection point shifted towards the zero bias direction. This behavior of the C and G/omega values can be attributed to an increase in the polarization and the introduction of more carriers in the structure. R(s) values increase with increasing temperature. Such temperature dependence is in obvious disagreement with the negative temperature coefficient of R or G reported in the literature. The intersection behavior of C-V curves and the increase in R(s) with temperature can be explained by the lack of free charge carriers, especially at low temperatures. (C) 2010 Elsevier B.V. All rights reserve

Effects of thermal annealing on the morphology of the AlxGa(1x)N films

Cataloged from PDF version of article.Effects of thermal annealing on the morphology of the AlxGa(1-x)N films with two different high Al-contents (x=0.43 and 0.52) have been investigated by atomic force microscopy (AFM). The annealing treatments were performed in a nitrogen (N-2) gas ambient as short-time (4 min) and long-time (30 min). Firstly, the films were annealed as short-time in the range of 800-950 degrees C in steps of 50-100 degrees C. The surface root-mean-square (rms) roughness of the films reduced with increasing temperature at short-time annealing (up to 900 degrees C), while their surface morphologies were not changed. At the same time, the degradation appeared on the surface of the film with lower Al-content after 950 degrees C. Secondly, the Al0.43Ga0.57N film was annealed as long-time in the range of 1000-1200 degrees C in steps of 50 degrees C. The surface morphology and rms roughness of the film with increasing temperature up to 1150 degrees C did not significantly change. Above those temperatures, the surface morphology changed from step-flow to grain-like and the rms roughness significantly increased. (C) 2009 Elsevier Ltd. All rights reserved

Tangential Nevanlinna-Pick interpolation for strong stabilization of MIMO distributed parameter systems

We study the problem of finding stable controllers that stabilize a multi-input multi-output distributed parameter system while simultaneously reducing the sensitivity of the system. The plants we consider have finitely many unstable transmission zeros, but they can possess infinitely many unstable poles. Using the tangential Nevanlinna-Pick interpolation with boundary conditions, we obtain both upper and lower bounds of the minimum sensitivity that can be achieved by stable controllers. We also derive a method to find stable controllers for sensitivity reduction. In addition, we apply the proposed method to a repetitive control system. © 2012 IEEE